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BD439/BD440 BD441/BD442
COMPLEMENTARY SILICON POWER TRANSISTORS
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SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION The BD439 and BD441 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in power linear and switching applications. The complementary PNP types are BD440, and BD442 respectively. SOT-32
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CES V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t 10 ms) Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature BD439 BD440 60 60 60 5 4 7 1 36 -65 to 150 150 Value BD441 BD442 80 80 80 V V V V A A A W
o o
Unit
C C
For PNP types voltage and current values are negative.
May 1997
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BD439/BD440/BD441/BD442
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.5 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I CES I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions for BD439/440 for BD441/442 for BD439/440 for BD441/442 V EB = 5 V I C = 100 mA for DB439/440 for BD441/442 I B = 0.2 A V CE = 5 V V CE = 1 V V CE = 5 V for BD439/440 for BD441/442 V CE = 1 V for BD439/440 for BD441/442 V CE = 1 V for BD439/440 for BD441/442 V CE = 1 V V CE = 1 V 3 0.58 1.5 60 80 0.8 V CB = 60 V V CB = 80 V V CB = 60 V V CB = 80 V Min. Typ. Max. 100 100 100 100 1 Unit A A A A mA V V V V V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE Collector-Emitter Saturation Voltage Base-Emitter Voltage
IC = 2 A I C = 10 mA IC = 2 A I C = 10 mA
h FE
DC Current Gain
20 15 40 40 25 15
130 130 140 140
I C = 500 mA
IC = 2 A
h FE1 /h FE2 Matched Pair fT Transition frequency
IC = 500 mA I C = 250 mA
1.4 MHz
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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BD439/BD440/BD441/BD442
SOT-32 (TO-126) MECHANICAL DATA
mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629
DIM.
H2
0016114
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BD439/BD440/BD441/BD442
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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